2001-05-16 page 1 spp80n06s2l-11 SPB80N06S2L-11 preliminary data optimos = == = power-transistor product summary v ds 55 v r ds ( on ) 11 m i d 80 a feature n-channel enhancement mode logic level 175c operating temperature avalanche rated d v /d t rated p-to263-3-2 p-to220-3-1 marking 2n06l09 2n06l09 type package ordering code spp80n06s2l-11 p-to220-3-1 q67060-s6035 SPB80N06S2L-11 p-to263-3-2 q67060-s6036 maximum ratings ,at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t c =25c t c =100c i d 80 56 a pulsed drain current t c =25c i d puls 320 avalanche energy, single pulse i d =80 a , v dd =25v, r gs =25 e as 280 mj reverse diode d v /d t i s =80a, v ds =44v, d i /d t =200a/s, t jmax =175c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t c =25c p tot 150 w operating and storage temperature t j , t st g -55... +175 c iec climatic category; din iec 68-1 55/175/56
2001-05-16 page 2 spp80n06s2l-11 SPB80N06S2L-11 preliminary data thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - - 1 k/w thermal resistance, junction - ambient, leaded r thja - - 62 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - - - 62 40 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0v, i d =1ma v (br)dss 55 - - v gate threshold voltage, v gs = v ds i d =93a v gs(th) 1.2 1.6 2 zero gate voltage drain current v ds =55v, v gs =0v, t j =25c v ds =55v, v gs =0v, t j =125c i dss - - 0.01 1 1 100 a gate-source leakage current v gs =20v, v ds =0v i gss - 1 100 na drain-source on-state resistance v gs =4.5v, i d =40a r ds(on) - 10.5 14.7 m drain-source on-state resistance v gs =10v, i d =40a r ds(on) - 8.6 11 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2001-05-16 page 3 spp80n06s2l-11 SPB80N06S2L-11 preliminary data electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 2* i d * r ds(on)max , i d =56a 38 76 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 1970 2465 pf output capacitance c oss - 460 575 reverse transfer capacitance c rss - 120 185 turn-on delay time t d(on) v dd =30v, v gs =4.5v, i d =80a, r g =3 - 8.4 13 ns rise time t r - 19 29 turn-off delay time t d(off) - 45 68 fall time t f - 18 27 gate charge characteristics gate to source charge q gs v dd =44v, i d =80a - 7 8.8 nc gate to drain charge q gd - 20 30 gate charge total q g v dd =44v, i d =80a, v gs =0 to 10v - 62 78 gate plateau voltage v (p lateau ) v dd =44v, i d =80a - 3.6 - v reverse diode inverse diode continuous forward current i s t c =25c - - 80 a inverse diode direct current, pulsed i sm - - 320 inverse diode forward voltage v sd v gs =0v, i f =80a - 1 1.3 v reverse recovery time t rr v r =30v, i f = l s , d i f /d t =100a/s - 43 54 ns reverse recovery charge q rr - 51 64 nc
2001-05-16 page 4 spp80n06s2l-11 SPB80N06S2L-11 preliminary data 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 140 160 c 190 t c 0 20 40 60 80 100 120 w 160 spp80n06s2l-11 p tot 2 drain current i d = f ( t c ) parameter: v gs 10 v 0 20 40 60 80 100 120 140 160 c 190 t c 0 10 20 30 40 50 60 70 a 90 spp80n06s2l-11 i d 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t c = 25 c 10 -1 10 0 10 1 10 2 v v ds 0 10 1 10 2 10 3 10 a spp80n06s2l-11 i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms 100 s t p = 11.0 s 4 transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w spp80n06s2l-11 z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2001-05-16 page 5 spp80n06s2l-11 SPB80N06S2L-11 preliminary data 5 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 80 s 0 2 4 6 8 v 11 v ds 0 20 40 60 80 100 120 140 160 a 190 spp80n06s2l-11 i d v gs [v] a a 2.4 b b 2.8 c c 3.0 d d 3.3 e e 3.5 f f 3.8 g g 4.0 h h 4.5 i p tot = 150 w i 10.0 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: v gs 0 20 40 60 80 100 120 a 160 i d 0 4 8 12 16 20 24 28 36 spp80n06s2l-11 r ds(on) v gs [v] = d d 3.3 e e 3.5 f f 3.8 g g 4.0 h h 4.5 i i 10.0 7 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 80 s 0 0.5 1 1.5 2 2.5 3 3.5 4 v 5 v gs 0 20 40 60 80 100 120 a 160 i d 8 typ. forward transconductance g fs = f( i d ); t j =25c parameter: g fs 0 10 20 30 40 50 60 a 80 i d 0 10 20 30 40 50 60 70 s 90 g fs
2001-05-16 page 6 spp80n06s2l-11 SPB80N06S2L-11 preliminary data 9 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 40 a, v gs = 10 v -60 -20 20 60 100 140 c 200 t j 0 4 8 12 16 20 24 28 36 spp80n06s2l-11 r ds(on) typ 98% 10 typ. gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds -60 -20 20 60 100 c 180 t j 0 0.4 0.8 1.2 v 2 v gs(th) 93 a 465 a 11 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 5 10 15 20 v 30 v ds 2 10 3 10 4 10 pf c c iss c oss c rss 12 forward character. of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd 0 10 1 10 2 10 3 10 a spp80n06s2l-11 i f t j = 25 c typ t j = 25 c (98%) t j = 175 c typ t j = 175 c (98%)
2001-05-16 page 7 spp80n06s2l-11 SPB80N06S2L-11 preliminary data 13 typ. avalanche energy e as = f ( t j ) par.: i d = 80 a , v dd = 25 v, r gs = 25 25 45 65 85 105 125 145 c 185 t j 0 20 40 60 80 100 120 140 160 180 200 220 240 mj 300 e as 14 typ. gate charge v gs = f ( q gate ) parameter: i d = 80 a pulsed 0 10 20 30 40 50 60 70 80 nc 100 q gate 0 2 4 6 8 10 12 v 16 spp80n06s2l-11 v gs 0,8 v ds max ds max v 0,2 15 drain-source breakdown voltage v (br)dss = f ( t j ) parameter: i d =10 ma -60 -20 20 60 100 140 c 200 t j 50 52 54 56 58 60 62 v 66 spp80n06s2l-11 v (br)dss
2001-05-16 page 8 spp80n06s2l-11 SPB80N06S2L-11 preliminary data published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. further information please notice that the part number is b spp80n06s2l-11 and b SPB80N06S2L-11, for simplicity the device is referred to by the term spp80n06s2l-11 and SPB80N06S2L-11 throughout this documentation.
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